Advanced Gate Stacks for High-Mobility Semiconductors
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(ID 150547805)
From the contents:
- 1. Strained-Si CMOS Technology.- 2. High Current Drivability MOSFET Fabricated on Si(110) Surface.- 3. Advanced High-Mobility Semiconductor-On-Insulator Materials.- 4. Passivation and Characterization of Germanium Surfaces.- 5. Interface Engineering for High-k Ge MOSFETs.- 6. Effect of Surface Nitridation on the Electrical Characteristics of Germanium High-k/Metal Gate Metal-Oxide-Semiconductor Devices.- 7. Modeling of Growth of High-k Oxides on Semiconductors.- 8. Physical, Chemical and Electrical Characterization of High-k Dielectrics on Ge and GaAs.- 9. Point Defects in Stacks of High-k Metal Oxides on Ge: Contrast with the Si Case.- 10. High k Gate Dielectrics for Compound Semiconductors.- 11. Interface Properties of High-k Dielectrics on Germanium.- 12. A theoretical View on the Dielectric Properties of Crystalline and Amorphous High-k Materials and Films.- 13. Germanium Nanodevices and Technology.- 14. Opportunities and Challenges of Germanium Channel MOSFETs.- 15. Germanium deep-submicron p-FET and n-FET devices, fabricated on Germanium-On-Insulator Substrates.- 16. Processing and Characterization of III-V Compound Semiconductor MOSFETs using Atomic Layer Deposited Gate Dielectrics.- 17. Fabrication of MBE High-k MOSFETs in a Standard CMOS Flow.
EAN/ISBN : 9783540714910
Publisher(s): Springer, Berlin
Discussed keywords: Halbleiter
Format: ePub/PDF
Author(s):Dimoulas, Athanasios - Gusev, Evgeni - McIntyre, Paul C.
- 1. Strained-Si CMOS Technology.- 2. High Current Drivability MOSFET Fabricated on Si(110) Surface.- 3. Advanced High-Mobility Semiconductor-On-Insulator Materials.- 4. Passivation and Characterization of Germanium Surfaces.- 5. Interface Engineering for High-k Ge MOSFETs.- 6. Effect of Surface Nitridation on the Electrical Characteristics of Germanium High-k/Metal Gate Metal-Oxide-Semiconductor Devices.- 7. Modeling of Growth of High-k Oxides on Semiconductors.- 8. Physical, Chemical and Electrical Characterization of High-k Dielectrics on Ge and GaAs.- 9. Point Defects in Stacks of High-k Metal Oxides on Ge: Contrast with the Si Case.- 10. High k Gate Dielectrics for Compound Semiconductors.- 11. Interface Properties of High-k Dielectrics on Germanium.- 12. A theoretical View on the Dielectric Properties of Crystalline and Amorphous High-k Materials and Films.- 13. Germanium Nanodevices and Technology.- 14. Opportunities and Challenges of Germanium Channel MOSFETs.- 15. Germanium deep-submicron p-FET and n-FET devices, fabricated on Germanium-On-Insulator Substrates.- 16. Processing and Characterization of III-V Compound Semiconductor MOSFETs using Atomic Layer Deposited Gate Dielectrics.- 17. Fabrication of MBE High-k MOSFETs in a Standard CMOS Flow.
EAN/ISBN : 9783540714910
Publisher(s): Springer, Berlin
Discussed keywords: Halbleiter
Format: ePub/PDF
Author(s):


